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hexfet ? power mosfet www.irf.com 1 s d g auirf2805s AUIRF2805L d 2 pak auirf2805s to-262 AUIRF2805L automotive grade gds gate drain source advanced planar technology low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * features description absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v (br)dss 55v r ds(on) max. 4.7m i d 135a parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy e as (tested) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds thermal resistance parameter typ. max. units r 0. ( ??? 40 c/w 300 (1.6mm from case ) 1.3 20 2.0 see fig.12a,12b, 15,16 w -55 to + 175 mj 380 200 max. 135 96 700 920 specifically designed for automotive applications, this stripe planar design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. pd - 96383a

2 www.irf.com s d g s d g repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). starting t j = 25c, l = 0.08mh, r g = 25 , i as = 104a. (see figure 12). i sd 104a, di/dt 240a/ s, v dd v (br)dss , t j 175c pulse width 400 s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population starting t j = 25c, l = 0.08mh, r g = 25 , i as = 104a. when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 55 ??? ??? v ( . 0.0 ( . . ( .0 .0 1 0 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 200 na gate-to-source reverse leakage ??? ??? -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) q g total gate charge ??? 150 230 q gs gate-to-source charge ??? 38 57 nc q gd gate-to-drain ("miller") charge ??? 52 78 t d(on) turn-on delay time ??? 14 ??? t r rise time ??? 120 ??? t d(off) turn-off delay time ??? 68 ??? ns t f fall time ??? 110 ??? l d internal drain inductance between lead, nh 6mm (0.25in.) l s internal source inductance between lead, and center of die contact c iss input capacitance ??? 5110 ??? c oss output capacitance ??? 1190 ??? c rss reverse transfer capacitance ??? 210 ??? ? = 1.0mhz, see fig.5 c oss output capacitance ??? 6470 ??? c oss output capacitance ??? 860 ??? c oss eff. effective output capacitance ???1600??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) a i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 80 120 ns q rr reverse recovery charge ??? 290 430 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v gs = 20v v gs = -20v m integral reverse p-n junction diode. v ds = 25v, i d = 104a i d = 104a v ds = 44v conditions v gs = 10v v gs = 0v v ds = 25v v gs = 0v, v ds = 0v to 44v t j = 25c, i s = 104a, v gs = 0v t j = 25c, i f = 104a di/dt = 100a/ s conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 104a v ds = v gs , i d = 250 a v ds = 55v, v gs = 0v v ds = 44v, v gs = 0v, t j = 150c v gs = 10v v dd = 28v i d = 104a r g = 2.5 ??? ??? ??? ??? 4.5 7.5 ??? ??? ??? 175 700 v gs = 0v, v ds = 1.0v, ? =1.0mhz v gs = 0v, v ds = 44v, ? =1.0mhz pf ??? mosfet symbol showing the

www.irf.com 3 qualification information ? 3l-d2 pak msl1 3l-to-262 n/a rohs compliant yes esd machine model class m4(+/- 800v ) ??? (per aec-q101-002) human body model class h3a(+/- 5000v ) ??? (per aec-q101-001) charged device model class c5(+/- 2000v ) ??? (per aec-q101-005) moisture sensitivity level qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. ? qualification standards can be found at international rectifier?s web site: http//www.irf.com/ ?? exceptions (if any) to aec-q101 requirements are noted in the qualification report. ??? highest passing voltage

4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20 s pulse width tj = 25c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20 s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 175a 4. 0 5.0 6. 0 7. 0 8. 0 9. 0 10. 0 v gs , gate-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v 20 s pulse width

www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 10000 c , c a p a c i t a n c e ( p f ) cos s crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 40 80 120 160 200 240 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 44v vds= 28v i d = 104a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec

6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 t , case temperature ( c) i , drain current (a) c d limited by package
1 0.1 %
+ - 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)

www.irf.com 7 d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit fig 14. threshold voltage vs. temperature r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs t p v (br)dss i as q g q gs q gd v g charge 25 50 75 100 125 150 175 0 200 400 600 800 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 42.5a 73.5a 104a -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1. 0 2. 0 3. 0 4. 0 - v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a

8 www.irf.com fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-07 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 10000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming tj = 25c due to avalanche losses. note: in no case should tj be allowed to exceed tjmax 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 10% duty cycle i d = 104a

www.irf.com 9 for n-channel hexfet ? power mosfets

p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ?

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www.irf.com 11 to-262 part marking information to-262 package outline ( dimensions are shown in millimeters (inches))

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12 www.irf.com 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. d 2 pak tape & reel infomation

www.irf.com 13 ordering information base part package type standard pack complete part number form quantity AUIRF2805L to-262 tube 50 AUIRF2805L auirf2805s d2pak tube 50 auirf2805s tape and reel left 800 auirf2805strl tape and reel right 800 auirf2805strr

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unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to ir?s terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with ir?s standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are designed and manufactured to meet dla military specifications required by certain military, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military grade products, is solely at the buyer?s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105

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